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ZXMHN6A07T8
ELECTRICAL CHARACTERISTICS (at T amb = 25° C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
V (BR)DSS
I DSS
I GSS
60
1.0
100
V
A
nA
I D = 2 5 0 A, V GS = 0 V
V DS = 6 0 V , V GS = 0 V
V GS = ± 2 0 V , V DS = 0 V
Gate-source threshold voltage
Static drain-source on-state
resistance (1 )
V GS(th)
R DS(on)
1.0
3.0
0.3
0.45
V
I D = 2 5 0 A, V DS = V GS
V GS = 1 0 V , I D = 1 . 8 A
V GS = 4 . 5 V , I D = 1 . 3 A
Forward transconductance
(1 ) (3 )
g fs
2.3
S
V DS = 1 5 V , I D = 1 . 8 A
DYNAMIC (3 )
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
166
20
9
pF
pF
pF
V DS = 4 0 V , V GS = 0 V
f= 1 MHz
SWITCHING (2 ) (3 )
Turn-on-delay time
t d(on)
1.8
ns
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
t r
t d(off)
t f
Q g
Q gs
Q gd
1.4
4.9
2.0
3.2
0.7
0.8
ns
ns
ns
nC
nC
nC
V DD = 3 0 V , I D = 1 . 8 A
R G @ 6 . 0 W , V GS = 1 0 V
V DS = 3 0 V , V GS = 1 0 V
I D = 1 . 8 A
SOURCE-DRAIN DIODE
Diode forward voltage (1 )
V SD
0.95
V
T j = 2 5 ° C, I S = 0 . 4 5 A,
V GS = 0 V
Reverse recovery time (3 )
Reverse recovery charge (3 )
t rr
Q rr
21
21
ns
nC
T j = 2 5 ° C, I F = 1 . 0 A,
di/ dt= 1 0 0 A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - MAY 2004
SEMICONDUCTORS
4
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